ICP Etching - Inductively Coupled Plasma Etch

Manufacturer and model: Oxford Instruments Plasmalab System 100

  • Separate RF generators for Inductively Coupled Plasma and electrode provide separate control over ion energy and ion density
  • High conductance pumping port provides high gas throughput for fastest etch rates
  • Electrostatic shield eliminates capacitive coupling, reduces electrical damage to devices, reduces chamber particles
  • Oxford Instruments' ICP tools include wafer clamping and helium cooling as standard, providing excellent temperature control with the option of a wide temperature range
ICP benefits
  • High etch rates are achieved by high ion density (>1011 cm3) and high radical density
  • Control over selectivity and damage is achieved by low ion energy
  • Separate control over Inductively Coupled Plasma and electrode RF provides high process flexibility
  • Chemical and ion-induced etching
  • Can also be run in RIE mode for certain low etch rate applications
  • Can be used for deposition in ICP-CVD mode, offering: - very dense films at lower temperatures than PECVD. - low damage deposition onto temperature sensitive substrates
  • Dry pumps
  • Cryo
  • EPD
Typical Applications:
  • Wide range of materials can be etched, including: - Dielectric materials (SiO2, SiNx, etc.). - Silicon-based materials (Si, a-Si, poly-Si). - III-V materials (GaAs, InP, GaN, etc.). - Sputtered metals (Au, Pt, Ti, Ta, W, etc.). - CI/F process
  • Low temperature deposition for lift off technology
  • Low temperature deposition of very high quality SiO2
  • Low temperature deposition of polySi
Available process gases:
Ar, O2, CF4, N2, N2O, SF6, C4F8, CHF3, HBr, BCl3, Cl2, SiH4.

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